1～3 件を表示 ／ 全 3 件
It is possible to measure the particle size distribution of powders.
Measurement of particle size distribution using laser diffraction method and evaluation of powder particle characteristics (such as particle size and shape) through image analysis are possible.
Measurement of film thickness in extremely small areas is now possible! Film thickness is calculated from the intensity of characteristic X-rays generated during electron beam irradiation.
We conduct thickness distribution measurements of thin films using EPMA. Thickness measurements of thin films are primarily performed using X-ray fluorescence and X-ray reflectivity methods. Since these methods use X-rays as the incident source, they can only measure the average thickness over a relatively wide measurement area. In contrast, by utilizing electron beams, we are now able to measure the thickness in extremely small areas (approximately 1μm²) and also perform thickness distribution mapping, so please make use of this capability. 【Features】 ■ Measurement principle: Thickness is calculated from the intensity of characteristic X-rays generated during electron beam irradiation. ■ Equipment used: EPMA ■ Spatial resolution: Approximately 1μm ■ Maximum measurable thickness: Approximately 1μm ■ Minimum mapping area: Approximately 80×80μm *For more details, please refer to the related links or feel free to contact us.
An example of measuring the stress distribution around an indentation made on SiC used in semiconductors! Analyzed with visible light laser.
Our company conducts stress distribution measurement using micro laser Raman spectroscopy. Residual stress can have various adverse effects on products, such as deformation and failure. There are several measurement methods available, and Raman spectroscopy is one effective means. In the related link, we present examples of stress distribution measurements around indentations made on SiC used in semiconductors, along with graphs and photographs. 【Features】 ■ Analysis equipment: RAMAN ■ Analysis method: Visible light laser ■ Analysis target: Raman-active materials (semiconductors, carbon, polymers, etc.) ■ Surface resolution: Approximately 1μm *For more details, please refer to the related link or feel free to contact us.
